首页> 外文期刊>レ-ザ-研究 >高速かっ広可変帯域な波長走査型近赤外VCSEL光源の開発
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高速かっ広可変帯域な波長走査型近赤外VCSEL光源の開発

机译:高速波长宽可变带宽波长扫描红外vcsel光源

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摘要

We report a MEMS(Micro-Electro-Mechanically-Systems)based high speed wavelength swept NIR(Near Infrared)VCSEL(Vertical-Cavity Surface-Emitting-Laser)source operating at 1050 nm wavelength range for the SS-OCT(swept-source optical-coherence-tomography)application.An electrically pumped half-VCSEL with a semiconductor bottom DBR(Distributed Brag Reflector)is used for its superior reliability and simple optical configuration as a light source.The developed tunable VCSEL is composed of silicon on insulator; SOI-MEMS based diaphragm mirror with a high reflective dielectric coating, and is mounted by the thermo-compression bonding of gold onto a half-VCSEL chip with strained InGaAs multi-quantum wells gain medium.Wavelength tuning range over 88 nm is achieved by mechanical means.This tuning range corresponds to 8.3%tuning ratio which is currently a record for electrically pumped tunable VCSELs.We also explained its application in SS-OCT sensing.
机译:我们报告基于MEMS(微电机 - 系统)的基于高速波长扫描NIR(近红外线)VCSEL(垂直腔表面发光激光)源,在SS-OCT的1050nm波长范围内操作(扫描源 光学相干断层扫描)应用。使用半导体底部DBR(分布式吹刷反射器)的电泵半VCSEL用于其优异的可靠性和简单的光学配置作为光源。开发的可调VCSEL由绝缘体上的硅组成; 基于SOI-MEMS的膜片镜具有高反射介电涂层,并通过金的热压缩键合到半VCSEL芯片上,具有应变的IngaAs多量子阱增益介质。通过机械实现88nm以上的波长调谐范围 意思。这个调谐范围对应于8.3%调谐比,当前是电气泵浦可调Vcsels的记录。我们还在SS-OCT感测中解释了其应用。

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