Local diagnostics of a dopant profiles of a semiconductor surface with the help of scanning microscope of electrostatic forces (numerical simulation)

摘要

The numerical experiments on measurement ofelectrostatic force of an attraction of conducting cantilever to asemiconductor surface depending on main parameters of contact(width of oxide, dopant concentration in semiconductor, type ofdopant, width of air gap and value of electrical bias on a samplebetween cantilever) are carried out on base of theoretical modelof a scanning microscope of electrostatic forces. In a range ofconcentration of dopant 1021-1025 l/M-3 accuracy of measurementof force 10-9 N is enough for local measurements have beenshown. The numerical experiments on a research of oscillationscantilever are carried out and a curves of change of thecharacteristics of cantilever oscillations depending on mianparameters of contact and cantilever are constructed. Thetheoretical model is developed and the numerical experiment fora case of constant bias modulated by impulses of largeamplitude are carried out.