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首页> 外文期刊>鉄と鋼/Journal of the Iron and Steel Institute of Japan. >Relation between Creep Rate during Accelerating Creep Stage and γ Channel Thickness in Single Crystal Nickel-based Superalloy, CMSX-4
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Relation between Creep Rate during Accelerating Creep Stage and γ Channel Thickness in Single Crystal Nickel-based Superalloy, CMSX-4

机译:单晶镍基超合金中加速蠕变阶段和γ通道厚度的蠕变率与γ通道厚度的关系.CMSX-4

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摘要

To elucidate the origin of the onset of accelerating creep in a single crystal nickel-based superalloy, CMSX-4, the correlation between the creep rate during the accelerating creep stage and the thickness of γ' channel was investigated by using the single crystals crept at 1273K in a wide stress range of 100-400 MPa. The shape of γ' phase and the thickness of γ channel at the time of the onset of accelerating creep turn to different ones with decreasing the stress. At the stress of 160 MPa, the cuboidal γ' phase turns its shape to a rafted one. While at the stresses less than 160 MPa the rafted γ' phase appears before the onset of accelerating creep. At the stresses higher than 250 MPa, the cuboidal γ' phase still remains. The correlation between the thickness of γ channel, λ{sub}γ, and the creep rate during the accelerating creep stage, ε, was evaluated, and the following equation, ε{top}.∝(λ{sub}γ){sup}4 is proposed and confirmed in a wide stress range of 100-400 MPa, independent of the shape of γ' phase. In addition, it was also confirmed that the radius of dislocation curvature within γ channel of the crept specimens was proportional to the thickness of γ channel defined by TEM. Consequently, the origin of the onset of accelerating creep in a single crystal nickel-based superalloy was interpreted by the loss of creep resistance due to an increase in the thickness of γ channel, λ{sub}γ.
机译:为了在单晶镍基超合金中加速蠕变的起源,CMSX-4,通过使用单个晶体来研究加速蠕变阶段期间的蠕变率和γ'通道厚度之间的相关性1273K在100-400 MPa的宽应力范围内。 γ'相的形状和γ通道的厚度在加速蠕变的时刻转向不同的γ通道,转向不同的γ通道,随着减小的应力而转向不同的曲线。在160MPa的应力下,立方体γ'相将其形状转向褶皱。虽然在小于160MPa的应力下,在加速蠕变开始之前出现椽子γ'相。在高于250MPa的应力下,立方体γ'阶段仍然存在。评估γ通道,λ{sub}γ和蠕变率ε,ε,ε,下方等式,ε{顶部}.α(λ{sub}γ)之间的相关性。α(λ{sub}γ){sup在100-400MPa的宽应力范围内提出并确认,与γ'相的形状无关。另外,还证实,爪式γ通道内的位错曲率半径与由TEM定义的γ通道的厚度成比例。因此,由于γ通道厚度的增加,通过蠕变电阻损失,解释了在单晶镍基超合金中的加速蠕变中的开始的起点。

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