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Synthesis of β-Mo2C Thin Films

机译:β-Mo2C薄膜的合成

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Thin films of stoichiometric β-Mo2C were fabricated using a two-step synthesis process. Dense molybdenum oxide films were first deposited by plasma-enhanced chemical vapor deposition using mixtures of MoF6, H2, and O2. The dependence of operating parameters with respect to deposition rate and quality is reviewed. Oxide films 100-500 nm in thickness were then converted into molybdenum carbide using temperature-programmed reaction using mixtures of H2 and CH4. X-ray diffraction confirmed that molybdenum oxide is completely transformed into the β-Mo2C phase when heated to 700 °C in mixtures of 20% CH4 in H2. The films remained well-adhered to the underlying silicon substrate after carburization. X-ray photoelectron spectroscopy detected no impurities in the films, and Mo was found to exist in a single oxidation state. Microscopy revealed that the as-deposited oxide films were featureless, whereas the carbide films display a complex nanostructure.
机译:使用两步合成工艺制备了化学计量的β-Mo2C薄膜。首先使用MoF6,H2和O2的混合物通过等离子体增强化学气相沉积法沉积致密的氧化钼膜。审查了操作参数对沉积速率和质量的依赖性。然后使用H2和CH4的混合物通过程序升温反应将厚度为100-500 nm的氧化膜转化为碳化钼。 X射线衍射证实,当在20%CH4 / H2的混合物中加热到700°C时,氧化钼会完全转变为β-Mo2C相。渗碳后,薄膜仍很好地粘附在下面的硅基板上。 X射线光电子能谱法没有发现膜中有杂质,并且发现Mo以单一氧化态存在。显微镜显示,沉积的氧化膜无特征,而碳化物膜显示复杂的纳米结构。

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