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Layer-Dependent Dopant Stability and Magnetic Exchange Coupling of Iron-Doped MoS2 Nanosheets

机译:掺杂铁的MoS2纳米片的层依赖性掺杂物稳定性和磁交换耦合。

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Using density-functional theory calculations including a Hubbard U term we explore structural stability, electronic and magnetic properties of Fe-doped MoS2 nanosheets. Unlike previous reports, the geometry and the stability of Fe dopant atoms in MoS2 nanosheets strongly depend on the chemical potential and the layer number of sheets. The substitution Fe dopant atoms at the Mo sites are energetically favorable in monolayer MoS2 and the formation of intercalated and substitutional Fe complexes are preferred in bilayer and multilayer ones under the S-rich regime that is a popular condition for the synthesis of MoS2 nanosheets. We find that the Fe dopants prefer to the ferromagnetic coupling in monolayer MoS2 and the antiferromagnetic coupling in bilayer and multilayer ones, suggesting the layer dependence of magnetic exchange coupling (MEC). The transition of MEC in Fe-doped MoS2 sheets induced by the change of layer number arises from the competition mechanism between the double-exchange and superexchange couplings. The findings provide a route to facilitate the design of MoS2-based diluted magnetic semiconductors and spintronic devices.
机译:使用包括Hubbard U项在内的密度泛函理论计算,我们研究了掺Fe的MoS2纳米片的结构稳定性,电子和磁性。与以前的报告不同,MoS2纳米片中Fe掺杂原子的几何形状和稳定性在很大程度上取决于化学势和片层数。在单层MoS2中,Mo位上的取代Fe掺杂原子在能量上是有利的,并且在富S体制下双层和多层中形成插层和取代Fe络合物是优选的,这是合成MoS2纳米片的普遍条件。我们发现,Fe掺杂剂更喜欢单层MoS2中的铁磁耦合和双层和多层中的反铁磁耦合,这表明磁交换耦合(MEC)的层依赖性。层数变化引起的Fe掺杂MoS2薄板中MEC的转变是由双交换和超交换耦合之间的竞争机制引起的。这些发现为简化基于MoS2的稀释磁性半导体和自旋电子器件的设计提供了一条途径。

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