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Simple Photoreduction of Graphene Oxide Nanosheet under Mild Conditions

机译:轻度条件下氧化石墨烯纳米片的简单光还原

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Graphene oxide (GO) nanosheets were reduced by UV irradiation in H2 or N2 under mild conditions (at room temperature) without a photocatalyst. Photoreduction proceeded even in an aqueous suspension of nanosheets. The GO nanosheets reduced by this method were analyzed by X-ray photoelectron spectroscopy and Raman spectroscopy. It was Found that epoxy groups attached to the interiors of aromatic domains oF the GO nanosheet were destroyed during UV irradiation to Form relatively large sp~2 islands resulting in a high conductivity. I-V curves were measured by conductive atomic Force microscopy (AFM; perpendicular to a single nanosheet) and a two-electrode system (parallel to the nanosheet). They revealed that photoreduced GO nanosheets have high conductivities, whereas nonreduced GO nanosheets are nearly insulating Ag~+ adsorbed on GO nanosheets promoted the photoreduction. This photoreduction method was very useful for photopatterning a conducting section oF micrometer size on insulating GO. The developed photoreduction process based on a photoreaction will extend the applications of GO to many fields because it can be performed in mild conditions without a photocatalyst.
机译:氧化石墨烯(GO)纳米片通过在温和的条件下(在室温下)在H2或N2中进行紫外线照射而被还原,而没有光催化剂。即使在纳米片的水悬浮液中也进行光还原。通过X射线光电子能谱和拉曼光谱分析了通过该方法还原的GO纳米片。结果发现,附着在GO纳米片芳族区域内部的环氧基在紫外线照射下被破坏,形成较大的sp〜2岛,从而形成高电导率。 I-V曲线通过导电原子力显微镜(AFM;垂直于单个纳米片)和两电极系统(平行于纳米片)测量。他们发现光还原的GO纳米片具有高电导率,而未还原的GO纳米片几乎绝缘,吸附在GO纳米片上的Ag〜+促进了光还原。这种光还原方法对于在绝缘GO上以微米级尺寸对导电部分进行光构图非常有用。由于基于光反应的光还原工艺可以在温和的条件下进行而无需光催化剂,因此将其应用于许多领域。

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