Design of gate bias circuit for compensation of temperature dependence and process variation of low noise amplifier using temperature and bias dependent small signal FET model

摘要

In this paper, a Ku-band Low-Noise MMIC amplifier is presented, which is equipped with a bias circuit that compensates not only temperature dependence of FETs' gain but also gain variation between chips due to process variations. The Ku-band low noise MMIC amplifier with proposed gate-bias circuit was designed and manufactured. It was proved that the proposed bias circuit reduced the temperature dependence of the two-stage MMIC amplifier's gain from 1.4 dB/100K to 1.0 dB/100K. The chip area consumed for the bias circuit is less than 10％ of the total chip size of 1.17 mm{sup}2. The gain variation between chips was reduced to 0.25 dB in RMS. This amplifier is suitable for active phased array applications.