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首页> 外文期刊>Journal of Ceramic Processing Research. (Text in English) >Aerosol deposition of thermoelectric p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thick films
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Aerosol deposition of thermoelectric p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thick films

机译:热电p型Bi0.5sb1.5te3和n型Bi2te2.7se0.3厚膜的气溶胶沉积

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摘要

A new aerosol deposition method was used to fabricate thick Bi-Te based thermoelectric films, such as p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3. The fabricated films exhibited dense morphologies without any large-scale porosity. Measured films thicknesses of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 were 276 mu m and 557 mu m, respectively. The thermoelectric properties of p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 were measured to be 1.18 x 10(4) S/m and 0.7 x 10(4) S/m of electrical conductivities, 230.1 mu V/K and -178 mu V/K of Seebeck coefficients, 0.62 mW/mK(2) and 0.21 mW/mK(2) of power factors, respectively. It was demonstrated that the aerosol deposition is a promising thick film fabrication method for improving the thermoelectric efficiency of the thermoelectric materials.
机译:新的气溶胶沉积方法用于制造厚的Bi-Te基热电薄膜,例如p型Bi0.5sb1.5te3和N型Bi2te2.7se0.3。 制造的薄膜在没有任何大规模孔隙率的情况下表现出致密的形态。 测量的Bi0.5sb1.5te3和Bi2te2.7se0.3的测量膜分别为276μm和557μm。 测量p型Bi0.5sb1.5te3和N型Bi2te2.7se0.3的热电性能为1.18×10(4)S / m和0.7×10(4)S / M的电导率,230.1μm 张差系数V / K和-178μV/ k分别的塞贝克系数,0.62mW / mk(2)和0.21 mW / mk(2)的电源因子。 结果表明,气溶胶沉积是一种有前途的厚膜制造方法,用于提高热电材料的热电效率。

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