Identification of the Diffusion Length in Gallium Nitride by Cathodoluminescence in Cases of the Exciton Recombination and Impurity Recombination of Nonequilibrium Charge Carriers

摘要

— A number of possibilities of a model of the quantitative cathodoluminescence of direct-gap materials is shown. It is based on using the dependence of the monochromatic cathodoluminescence intensity on the electron-beam energy in the case of a constant level of electron—hole pair generation. In accordance with the results of experimental studies of single-crystal n -GaN, estimates of the diffusion length and the lifetime of minority charge carriers for the spectral range corresponding to impurity recombination and also estimates of the diffusion length and the lifetime of bound excitons are obtained by means of this model.