Novel Photoresist using Photodeprotectable N-Alkoxybenzyl Aromatic Polyamide

摘要

Photodeprotection of N-octyloxybenzyl aromatic polyamide film containing photo acid generator (PAG) was investigated. The photodeprotection was proceeded well under UV irradiation (365 nm, 5 J/cm(2)), followed by heating at 130 degrees C for 15 min in the presence of 25 wt% of PAG. Line pattern of 30 to 20 mu m on Si wafer was obtained from the photosensitive film after dipping into acetone. It turned out that N-alkoxybenzyl aromatic polyamides serve as a new photosensitive material in the presence of PAG.