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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Direct tuning of the band gap via electronicallyactive organic cations and large piezoelectric response in one- dimensional hybrid halides from first- principles
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Direct tuning of the band gap via electronicallyactive organic cations and large piezoelectric response in one- dimensional hybrid halides from first- principles

机译:通过电子源极活性有机阳离子直接调谐带隙和一维杂交卤化物中的大型压电反应从第一原理

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摘要

Three- (3D) and two-dimensional (2D) organic-inorganic hybrid halides exhibit superior optoelectronic properties, which strongly depend on the [BX6] inorganic networks. A-Site organic molecules are considered to have a negligible influence on the electronic states around the Fermi level. Here, using the first-principles method, we exploited the ground state properties and band gap engineering through A-site electronically-active organic molecules in 1D GAPbI(3) (GA = C(NH2)(3)). Our results revealed that, from 3D to 1D structures, organic cation GA(+)-based states can directly contribute to the valence band edges. By introducing C7H7+ organic cations into GAPbI(3), the band gap is directly tuned from 2.28 to 0.69 eV, originating from the partially unoccupied C 2p states of C7H7+ forming several conduction bands below the Pb 6p states. The C7H7+-doped material is expected to exhibit significantly absorption in the visible light region. Finally, we predict a large piezoelectric response in GAPbI(3) with d(31) = -141.09 and d(32) = 146.16 pC N-1, which is four times higher than that of the most widely used flexible piezoelectric poly(vinylidene fluoride) (PVDF) material. Our findings will provide new insights into low-dimensional hybrid halides and reveal their potential applications in flexible electronics.
机译:三(3D)和二维(2D)有机 - 无机杂交卤化物具有出色的光电性能,其强烈取决于[BX6]无机网络。 A现场有机分子被认为对Fermi水平周围的电子状态具有可忽略不计的影响。这里,使用第一原理方法,我们通过1D间隙(3)(Ga = C(NH2)(3))中的A站点电子活性有机分子来利用地面状态性质和带隙工程。我们的结果表明,从3D到1D结构,基于有机阳离子Ga(+)的州可以直接贡献价带边缘。通过将C7H7 +有机阳离子引入GapBi(3)中,带隙从2.28到0.69eV直接调谐,源自C7H7 +的部分未占用的C 2P状态,形成PB 6P状态下方的几个导电带。 C7H7 +掺杂物质预计在可见光区域中表现出显着吸收。最后,我们预测GAPBI(3)中的大量压电反应,D(31)= -141.09和D(32)= 146.16cc n-1,其比最广泛使用的柔性压电多(亚二烯烯)高四倍氟化物)(PVDF)材料。我们的调查结果将为低维杂交卤化物提供新的见解,并揭示它们在柔性电子产品中的潜在应用。

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