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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >The transverse thermoelectric effect in a-axis inclined oriented SnSe thin films
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The transverse thermoelectric effect in a-axis inclined oriented SnSe thin films

机译:横向热电效应在轴倾斜的SNSE薄膜

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摘要

Tin selenide (SnSe) has recently attracted great attention as a new promising thermoelectric material. In this paper, a-axis inclined oriented SnSe thin films have been fabricated by pulsed laser deposition for the development of the transverse thermoelectric effect. Large open-circuit voltage signals along the film plane are all clearly observed when the film surface is illuminated by different lasers with the wavelength ranging from 532 to 2200 nm with no external bias or a built-in electric field, and the amplitude of the output voltage can be enhanced by tuning the inclination angle of the films or the applied temperature difference across the film thickness. Moreover, transverse open-circuit voltage signals are also detected when the film surface is irradiated by a thermal heater. This work demonstrates the novel potential application of SnSe for self-powered broad-band light detectors or thermal sensors.
机译:锡硒德(SNSE)最近吸引了极大的关注作为一种新的有希望的热电材料。 在本文中,通过脉冲激光沉积来制造轴倾斜的SNSE薄膜,用于横向热电效应的发展。 当薄膜表面被不同的激光器照射时,沿薄膜平面的大开关电压信号都清楚地观察到,不同的激光器从532到2200nm的波长,没有外部偏置或内置电场,以及输出的幅度 通过调节膜的倾斜角度或膜厚度的施加温差来增强电压。 此外,当膜表面被热加热器照射时,还检测横向开路电压信号。 这项工作展示了用于自动宽带光探测器或热传感器的SNSE的新颖潜在应用。

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