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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >An 'inverted load' strategy to fabricate interface-optimized flexible electrodes with superior electrochemical performance and ultrastability
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An 'inverted load' strategy to fabricate interface-optimized flexible electrodes with superior electrochemical performance and ultrastability

机译:“倒置负载”策略,用于制造具有卓越电化学性能和超眠性的界面优化的柔性电极

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摘要

With the rapid development of portable electronics, a flexible supercapacitor (SC) is highly desired for energy storage devices due to its fast charging, large capacitance and high energy density. However, inferior interfacial property is a common problem faced by many flexible electrodes, which can result in reduced electrochemical performance and limited stability. Herein, an "inverted load" strategy, which is in contrast to the traditional "forward load" method, is used to deposit the active material, the conductive layer and the flexible substrate sequentially on a glass plate, followed by peeling of the whole film, to fabricate an integrated flexible electrode. This innovative strategy contributes to the strong interlayer adhesion of the electrode, which greatly improves the electrochemical properties and stability. In the integrated electrode, a silver nanowires (AgNWs) network is tightly embedded between the PEDOT:PSS buffer layer and the colorless polyimide (CPI) substrate, which endows this electrode with excellent conductivity and bending stability. A higher specific capacitance (15.8 mF cm(-2)at a current density of 0.1 mA cm(-2)) and an enhanced capacitance retention of 92% after 10 000 CV cycles can be achieved for the W0.71Mo0.29O3/PEDOT:PSS/AgNWs/CPI (WPAC) electrode with W(0.71)Mo(0.29)O(3)as the active layer, while the PEN/ITO/PEDOT:PSS/W0.71Mo0.29O3(PIPW) electrode prepared by the traditional "forward load" method only reaches 8.0 mF cm(-2)at the same current density with a poor electrochemical cyclic stability of 48% after only 1000 CV cycles. Taking advantage of the superflexibility of the CPI substrate, the electrode can achieve outstanding flexible bending stability with the resistance of the WPAC electrode increasing less than 1% with almost no capacitance loss after 10 000 times of bending with a curvature radius of 500 mu m. This novel strategy provides a new perspective on the design and fabrication of a transparent, stable and flexible electrode for electronic devices.
机译:随着便携式电子产品的快速发展,由于其快速充电,大电容和高能量密度,能量存储装置非常需要柔性超级电容器(SC)。然而,较差的界面性质是许多柔性电极面临的常见问题,这可能导致电化学性能降低和有限的稳定性。这里,与传统的“正向载荷”方法相反的“倒置负荷”策略用于顺序地在玻璃板上依次将活性材料,导电层和柔性基板沉积,然后剥离整个膜,制造集成的柔性电极。这种创新策略有助于电极的强夹层粘附,这大大提高了电化学性质和稳定性。在集成电极中,银纳米线(AgNW)网络紧密地嵌入PEDOT:PSS缓冲层和无色聚酰亚胺(CPI)衬底之间,其具有优异的导电性和弯曲稳定性。对于W0.71MO0.29O3 / PEDOT,可以实现较高的电流电容(15.8mF cm(-2),电流密度为0.1 mA cm(-2))和92%的增强电容保留92% :PSS / AGNWS / CPI(WPAC)电极(0.71)MO(0.29)O(3)作为有源层,而笔/ ITO / PEDOT:PSS / W0.71MO0.29O3(PIPW)电极由此制备传统的“前进载荷”方法仅在相同的电化学循环稳定性下达到8.0mF cm(-2),只有1000个简化循环后的电化学循环稳定性为48%。利用CPI衬底的超重性,电极可以通过WPAC电极的电阻达到优异的柔性弯曲稳定性,随着500μm的曲率半径的弯曲半径的10 000次,几乎没有电容损耗。该新颖策略提供了一种关于电子设备的透明,稳定和柔性电极的设计和制造的新视角。

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  • 作者单位

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Jiangsu Key Lab Sci &

    Applicat Mol Ferroelect Sch Chem &

    Chem Engn Jiangsu Prov Hitech Key Lab Rio Med Res Nanjing 211189 Jiangsu Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
  • 关键词

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