首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >An interplay between electronic and structural effects on the photoluminescence decay mechanisms in LaPO4 center dot nH(2)O:Tb3+ and LaPO4:Tb3+ single-crystal nanorods
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An interplay between electronic and structural effects on the photoluminescence decay mechanisms in LaPO4 center dot nH(2)O:Tb3+ and LaPO4:Tb3+ single-crystal nanorods

机译:LAPO4中心点NH(2)O:TB3 +和LAPO4:TB3 +单晶纳米棒的电子和结构效果之间的相互作用

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A novel High Energy Resolution Fluorescence Detected X-ray Absorption Spectroscopy (HERFD-XAS) study at the Tb L-3-edge for the rhabdophane-type LaPO(4bold)nH(/bold2)O:Tb3+ and the monazite-type LaTbPO4:Tb3+ nanorods is reported. We have observed that the changes in the white-line intensity follow a similar trend to that previously observed in the photoluminescence behaviour of these materials. Those changes have been assigned to the localization of the terbium 5d states and the modification induced by the hybridization with the next neighbours as the terbium content is varied. The interplay between electronic (d-state localization) and structural (local disorder) effects is used to explain the different optical behaviour between the two series of nanorods. The XAS results indicate that the local ordering is a key factor influencing the different emission efficiencies, quenching effects and decay lifetimes observed experimentally for both series of nanorods. The present results indicate that the long lifetime decay process is accounted within a standard single Tb3+ ion scenario, where the structural disorder, favoured by the presence of water molecules in the structure, aids the non-radiative recombination processes. Implications for future use of the white-line intensity in the HERFD-XAS spectra in characterizing other luminescent materials are also discussed.
机译:一种新的高能量分辨率荧光检测到旋光蛋白型Lapo(4℃)的Tb L-3边缘的X射线吸收光谱(HERFD-XAS)研究(4℃)NH(& /粗体& 2)O:TB3 +并报告了Monazite型Latbpo4:TB3 +纳米棒。我们已经观察到,白线强度的变化遵循类似于这些材料的光致发光行为中预先观察到的类似趋势。已经将这些变化分配给铽5D状态的定位,并且随着铽含量的变化而与下一个邻居的杂交引起的修饰。电子(D态定位)与结构(局部疾病)效应之间的相互作用用于解释两种系列纳米棒之间的不同光学行为。 XAS结果表明,局部排序是影响不同发射效率,淬火效果和衰减的衰减寿命的关键因素,用于两系列纳米棒观察。本结果表明,长寿命衰变过程在标准单TB3 +离子情况下占,其中结构障碍在结构中存在水分子的存在,有助于非辐射重组方法。还讨论了对特征在于表征其他发光材料的Herfd-XAS光谱中的白线强度的影响。

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