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Sub-nanosecond Nd:Lu0.61Gd0.39VO4 microchip laser

机译:亚纳秒ND:LU0.61GD0.39VO4 Microchip激光器

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摘要

We report the fabrication and operation of a single-to-three-mode, sub-nanosecond passively Q-switched Nd:Lu0.61Gd0.39VO4/Cr4+:YAG microchip laser, which exhibits changes in mode structure with increasing incident pump power. The laser exhibits longitudinal mode oscillations with a partial transverse mode overlap. The shortest pulse duration, highest pulse energy and peak power observed are 646ps, 8.7 mu J and 13.5kW, respectively.
机译:我们报告了单对三型,子纳秒的制造和操作,子纳秒被动Q-Switched Nd:Lu0.61GD0.39VO4 / CR4 +:YAG Microchip激光器,其在增加的入射泵功率增加了模式结构的变化。 激光器具有局部横向模式重叠的纵向模式振荡。 观察到的最短脉冲持续时间,最高脉冲能量和峰值功率分别为646ps,8.7μJ和13.5kw。

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