Efficient Terahertz Plasmonic Absorbers with V-Grooves Using Highly Doped Silicon Substrate and Simple Wet-Etching Techniques

摘要

We experimentally demonstrate that at terahertz frequencies perfect plasmonic absorbers made from a 3D V-groove array in a highly doped silicon wafer can be easily realized using simple wet-etching process. The surface plasmon modes can be excited by the V-groove array and get decayed when they propagate along the silicon surface and enter the grooves, inducing a broadband near-zero dip in the reflection spectra. The reflection spectrum of the fabricated absorber is characterized using a terahertz time-domain spectroscopy system, and the experimental results are in good agreement with numerical simulations. The high performance including high absorptivity and large bandwidth together with the easy fabrication processes presented in this paper make this plasmonic absorber promising for a wide range of practical applications in terahertz regime.