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机译:重离离子辐照下硅探测器劣化的对比研究
Division of Solid-State Electronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation;
Division of Solid-State Electronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation;
Joint Institute for Nuclear Research Joliot-Curie 6 Dubna Moscow region 141980 Russian Federation;
GSI Helmholtzzentrum für Schwerionenforschung Plankstrasse 1 Darmstadt 64291 Germany;
Research Institute of Material Science and Technology 4 Passage 4806 Zelenograd Moscow 124460 Russian Federation;
Division of Solid-State Electronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation;
Division of Solid-State Electronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation;
Division of Solid-State Electronics Ioffe Institute 26 Politekhnicheskaya St. Petersburg 194021 Russian Federation;
Heavy-ion detectors; Instrumentation for heavy-ion accelerators; Radiation-hard detectors;
机译:重离离子辐照下硅探测器劣化的对比研究
机译:研究24 GeV / c和26 MeV质子在强辐射的MCz和FZ硅探测器上引起的辐射损伤
机译:高辐射硅和非辐射SI LEC GaAs探测器的比较研究
机译:强辐射硅和非辐射SI LEC GaAs探测器的比较研究
机译:γ射线降解三种β受体阻滞剂的每级电能(EE / O)的比较研究。
机译:质子束辐照对葡萄膜黑色素瘤的影响:辐照与未辐照的黑色素瘤中Ki-67表达的比较研究
机译:硅探测器的中子,质子和伽马射线辐照