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首页> 外文期刊>BARC Report >SO_4~- - SO_3~- radical pair formation in Ce doped and Ce, U co-doped K_3Na(SO_4)_2: EPM evidence and its role in TSL
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SO_4~- - SO_3~- radical pair formation in Ce doped and Ce, U co-doped K_3Na(SO_4)_2: EPM evidence and its role in TSL

机译:Ce掺杂和Ce,U共掺杂K_3Na(SO_4)_2中SO_4〜--SO_3〜-自由基对的形成:EPM证据及其在TSL中的作用

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摘要

TSL and EPR studies on these phosphors have shown that the defect centres are intimately related to the process of TSL in these phosphors. The release of hole/electron from defect centres at the characteristic trap site initiates the luminescence process in these materials. These aspects have been clearly demonstrated in a number of alkaline earth sulphates and mixed alkaline earth sulphates doped with actinides and lanthanides, studied in our laboratory. In all the sulphate lattices, SO_4~- centre (hole trapped at SO_4~(2-) ion) has exhibited near identical behaviour both for dose dependence and thermal ionization. This was found to be associated with the TSL peak observed around 415 K in these matrices. In this paper, we discuss the results of TSL and EPR studies on cerium doped as well as cerium and uranium co-doped K_3Na(SO_4)_2.
机译:对这些磷光体的TSL和EPR研究表明,缺陷中心与这些磷光体中TSL的过程密切相关。从特征陷阱位置处的缺陷中心释放空穴/电子会启动这些材料中的发光过程。在我们实验室研究的许多碱金属硫酸盐和掺有act系元素和镧系元素的混合碱土硫酸盐中,这些方面得到了明确证明。在所有硫酸盐晶格中,SO_4_-中心(捕获在SO_4〜(2-)离子处的空穴)在剂量依赖性和热电离方面均表现出几乎相同的行为。发现这与在这些基质中415 K附近观察到的TSL峰有关。在本文中,我们讨论了TSL和EPR研究铈掺杂以及铈和铀共掺杂K_3Na(SO_4)_2的结果。

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