A low-cost W-band SPDT switch with Q-MMIC concept using quartz substrate

摘要

In this paper, a high-performance PIN diode single-pole-double-throw (SPDT) switch for W-band application is developed. By employing quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) technology, the cost of the switch is significantly reduced while maintaining performance and size with conventional MMIC counterpart. A 3-D PIN diode model is used to describe the diode characteristic under both forward and reverse biasing states. In order to alleviate parasitic parameters effect on performance of the switch, compensation structures are analyzed and adopted. The measurement results show the insertion loss is less than 2dB from 82 to 100GHz and the isolation is greater than 32dB from 82 to 105GHz. The total size of the SPDT switch is 2.1mmx4.3mm.