Radiation-Induced Defects in Si after High Energy Proton Irradiation

摘要

Experiments on investigation of the radiation defects produced as a result of high energy proton irradiation of single crystal Si wafers are carried out. Parameters of the proton irradiation facility are presented. It is shown that the most efficient radiation defect formation correlates with the position of the Bragg peak of ionization losses. LT spectra were measured just after irradiation and then after keeping Si samples during 3 months of at room T. We did not observe any variation of the number density of the defects, except for the 7th wafer, where most part of protons was stopped. An efficient annealing of the vacancy-type defects starts at temperatures slightly lower than 100 oC (during 10 min). Annealing at about 700 oC leads to recovering of the monoexponrntial shape of the LT spectra.