On Optimization of Manufacturing of Field-Effect Heterotransistors Framework Circuit, Including into Itself Two Coupled Logical Element XOR, to Increase Their Density

摘要

In this paper we introduce an approach to increase density of field-effect heterotransistors framework a circuit, including into itself two coupled logical element XOR. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements willbe decreased due to manufacture heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.