Self-consistent solutions of 2D-Poisson and Schrodinger Wave equations for a Gaussian doped 50 nm MOSFET

摘要

In this paper a self-consistent solution of two-dimensional Poisson and Schrodinger Wave equation using index formulation method of a 50 nm Gaussian doped Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) is presented. The MOSFET is assumed to have parabolic source and drain region. It is shown that Quantum Mechanical (QM) effects strongly influence the potential profile and the charge distribution function within the channel of the nano-scale device. These results show that full OM simulations will become mandatory issue for nanoscale MOSFET modeling and design in coming future.