机译:P掺杂的IN2S3纳米电池与INPOX覆盖层相结合:电荷转移途径和高度增强的光电化学水分裂
Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &
Photon Devices 105 North Rd Western 3rd Ring Beijing 100048 Peoples R China;
Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &
Photon Devices 105 North Rd Western 3rd Ring Beijing 100048 Peoples R China;
Chinese Acad Sci Inst Chem 2 Zhongguancun North First St Beijing 100190 Peoples R China;
Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &
Photon Devices 105 North Rd Western 3rd Ring Beijing 100048 Peoples R China;
Capital Normal Univ Dept Chem Beijing Key Lab Opt Mat &
Photon Devices 105 North Rd Western 3rd Ring Beijing 100048 Peoples R China;
Nankai Univ Coll Environm Sci &
Engn Tianjin 300071 Peoples R China;
Photoelectrochemical; In2S3; Nanosheet; Water splitting; Phosphorization;
机译:P掺杂的IN2S3纳米电池与INPOX覆盖层相结合:电荷转移途径和高度增强的光电化学水分裂
机译:增强了纳米纳米纤维光电耦合的光电化学性能与可见光活性G-C3N4纳米纳米纳米片进行水分裂
机译:通过具有FeOOH覆盖层的SILAR沉积的Ti掺杂的赤铁矿薄膜增强光电化学水分解
机译:In2S3修饰的ZnO纳米棒阵列用于光电化学水分解
机译:通过掺杂和敏化增强钛和氧化钨基材料的光电化学水分解特性。
机译:ZnO修饰的In2S3纳米片阵列通过原子层沉积的高度增强的可见光驱动光电化学性能
机译:在α-Fe2O3上稳定的Ta2O5覆盖层可以提高光电化学水分解效率