Work Efficient Full Wave Bridge Rectifier Using Multi Fin Technology

摘要

A low leakage FinFET based full wave bridge rectifier is analyzed. A diode can be replaced by diode connected MOS transistors. A rectifier with less ripples and small area capacitor consumption is required since, full-wave rectifier is most useful in low-frequency applications and its good for the other application also instrumentation, signal processing, large load current, low voltage power supplies. The topology of rectifier does not require the complex circuit design. The gate of selected transistors are used to derive when the highest voltage available in the circuit in to decrease leakage current and channel on impedance while it is having increased tranconductance. In this paper we use FinFET technique to reduce the leakage power. The FinFET devices reliability and operation are demonstrated. The design is very essential for the practical applications and circuit operation. The circuit is given a dc output and the output measurement is achieved a high efficiency, high voltage gain. After simulation and analysis of the proposed circuit, the leakage power is obtained for the proposed circuit has found 0.469 fW, and the Noise has found 156.87 db the efficiency of the proposed circuit has found 83.37% which explains an improvement as compared to that of the diode based bridge rectifier circuit. Rectification is basically achieved by unidirectional device. The simulation is done using CADENCE simulator software. The proposed circuit was implemented using the 45 nm technology.