首页> 外文期刊>Journal of Applied Electrochemistry >Ultra-fast charging-discharging planar on-chip micro-supercapacitors based on reduced graphene oxide films by modified liquid-air interface self-assembly
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Ultra-fast charging-discharging planar on-chip micro-supercapacitors based on reduced graphene oxide films by modified liquid-air interface self-assembly

机译:通过改进的液体空气接口自组装,超快速充电平面上芯片微型超超级电容器

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摘要

Planar on-chip micro-supercapacitor (POMS), as a new energy storage device, can be easily used for integration with micro/nano electronic devices to provide an effective power source. In this work, a modified liquid-air interface self-assembly method is introduced to fabricate reduced graphene oxide (RGO) films on the silicon wafer for POMSs. The RGO films have good surface morphologies, uniform thickness (313.073nm) and high conductivity (640.3Scm(-1)) after hydroiodic acid treatment. The POMS exhibits a maximum stack capacitance of 351.59mFcm(-3) and 98.17% capacitance of POMSs was retained after charging and discharging for 2000 cycles at a scan rate of 1000Vs(-1). Specially, there is still a high power density (587.85mWcm(-3)) at an ultra-high scan rate of 5000Vs(-1) as well as an ultra-fast charging-discharging time (14ms). The demonstrated POMS has a good application foreground in the preparation of high-performance integrated micro-devices.
机译:平面片上的微型超级电容器(POMS),作为新的能量存储装置,可以轻松地与微/纳米电子设备集成,以提供有效的电源。 在这项工作中,引入了改进的液体 - 空气界面自组装方法,以制造在硅晶片上的硅氧化物(Rgo)膜的用于POMSS。 Rgo膜具有良好的表面形态,均匀的厚度(313.073nm)和高导电性(640.3Scm(-1))后氢酸处理。 POMS表现出最大堆叠电容为351.59MFCM(-3),在充电和排出2000次循环的情况下,保留了98.17%的POMS电容,扫描速度为1000V(-1)。 特别地,仍有高功率密度(587.85MWCM(-3)),超高扫描速率为5000Vs(-1),以及超快速充电排出时间(14ms)。 在制备高性能集成微器件时,所示的POM具有良好的应用前景。

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