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首页> 外文期刊>Diamond and Related Materials >Strain-induced semiconductor-to-metal transitions in C-36-based carbon peapods: Ab initio study
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Strain-induced semiconductor-to-metal transitions in C-36-based carbon peapods: Ab initio study

机译:应变诱导的C-36碳豌孔中的半导体 - 金属转变:AB Initio研究

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摘要

We present a density functional study of the band structure and some elastic properties of semiconductor carbon nanotube endohedrally doped with the C-36 fullerenes. We found that the electronic states belonging to C(36)s lied inside the band gap of the pristine tube. External strain applied along the tube axis results in decreasing of the semiconducting gap from 0.3 to 0 eV. Metallic behavior of the strained system is confirmed via the additional calculations of electronic transmission coefficients. Phonons influence is accounted with the molecular dynamics approach. Strain of about 0.04 corresponds to the linear part of stress-strain curve and is found to be sufficient to observe the semiconductor-to-metal transitions at room temperature.
机译:我们介绍了一个带结构的密度函数研究和半导体碳纳米管的一些弹性性能,侧胚掺杂C-36富勒烯。 我们发现属于C(36)的电子状态呈现在原始管的带隙内。 沿管轴施加的外部应变导致从0.3〜0eV的半导体间隙降低。 通过电子透射系数的额外计算确认应变系统的金属行为。 声子的影响因素受到分子动力学方法。 应变约0.04对应于应力 - 应变曲线的线性部分,并且发现足以观察室温下的半导体 - 金属转变。

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