首页> 外文期刊>Diamond and Related Materials >Vertically aligned carbon nanotube arrays growth modeling at different temperatures and pressures in reactor
【24h】

Vertically aligned carbon nanotube arrays growth modeling at different temperatures and pressures in reactor

机译:垂直对准的碳纳米管阵列在不同温度和反应器中的压力下生长建模

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

A model for the growth of carbon nanotubes was developed and the calculations for this model were compared with experiment. Experimental growth of carbon nanotubes arrays was carried out by the CVD method in a stream of acetylene, ammonia and argon at temperatures from 550 to 950 degrees C. A nickel film of 4 nm thickness on the surface of titanium nitride was used as a catalyst. The model takes into account the pyrolysis of hydrocarbons on the surface of the catalyst nanoparticles, the formation of a barrier layer on its surface, which slows down and stops the growth of the nanotube array, the interaction of the substance of the buffer layer with carbon in the catalyst nanoparticle. When developing the model, the mechanisms of individual processes were considered and the temperature dependences of the kinetic coefficients, which describe the growth of nanotubes, were obtained. It is these dependences that show a good agreement between the calculations and the experiment.
机译:开发了一种用于碳纳米管的生长模型,并将对该模型的计算与实验进行了比较。 碳纳米管阵列的实验生长是通过CVD方法在乙炔,氨和氩气流中进行的,在550至950℃的温度下进行。氮化钛表面的4nm厚的镍膜用作催化剂。 该模型考虑了催化剂纳米颗粒表面上烃的热解,在其表面上形成阻挡层,其减缓并停止纳米管阵列的生长,将缓冲层的物质与碳的相互作用相互作用 在催化剂纳米粒子中。 在开发模型时,得到了各种过程的机制,获得了描述纳米管生长的动力学系数的温度依赖性。 这些依赖性显示了计算与实验之间的良好一致性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号