Spin-polarized Goos-Hanchen displacement in a hybrid magnetic-electric barrier nanostructure modulated by spin-orbit couplings

摘要

Spin-polarized Goos-Hanchen (GH) displacement is calculated for electrons in a hybrid magnetic-electric-barrier (MEB) nanostructure modulated by spin-orbit couplings (SOCs), which can be realized experimentally by the deposition of a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in parallel configuration on the top of the GaAs/AlxGa1-xAs heterostructure. Both Zeeman interaction (ZI) and SOC are taken into account. It is shown that ZI has less contribution to spin-polarized GH displacement than SOC due to a small g-factor for GaAs. It is also shown that spin-polarized GH displacement can be controlled by Rashba or Dresselhause SOC-interfacial confining electric field or strain engineering, which results hence in a tunable spatial spin splitter for spintronics device applications.