首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Highly oriented nanocrystalline bismuth telluride thin films obtained by radio-frequency magnetron sputtering with a magnetic field applied to the substrate via an affixed permanent magnet
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Highly oriented nanocrystalline bismuth telluride thin films obtained by radio-frequency magnetron sputtering with a magnetic field applied to the substrate via an affixed permanent magnet

机译:高度取向的纳米晶体铋通过射频磁控管溅射获得的碲化酰胺薄膜,通过固定的永磁体施加到基板上的磁场获得

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摘要

We deposited nanostructured bismuth telluride (Bi2Te3) thin films on glass substrates with Nd-Fe-B permanent magnets of varying magnetic flux densities attached to the backside, and then thermally annealed them in an electric furnace. Surface scanning electron microscopy (SEM) revealed that the thin films deposited without the additional magnetic field and in the presence of an additional magnetic field with a magnetic flux density of 189 mT were both composed of nano-sized crystal grains with flat surfaces. XRD patterns indicated that the thin film deposited at 189 mT exhibited very high crystal orientation along the c-axis. As a result, this thin film exhibited high mobility and a power factor of 14.1 mu W/(cm.K-2), which was 65% higher than that of the thin film deposited in the absence of an additional magnetic field. When the magnetic flux density was increased to 378 mT or more, the thin film surface was covered with irregularly shaped powder depositions, resulting in a decrease in the crystal orientation, and by extension, the desirable thermoelectric properties. Therefore, we conclude that application of an additional magnetic field with a moderate magnetic flux density can improve the structural and thermoelectric properties of Bi2Te3 thin films deposited by RF magnetron sputtering.
机译:在具有连接到背面的不同磁通密度的ND-Fe-B永磁体上沉积在玻璃基板上的纳米结构铋(Bi2Te3)薄膜,然后在电炉中热退火。表面扫描电子显微镜(SEM)显示,在没有附加磁场的情况下沉积的薄膜,并且在具有189mt的磁通密度的附加磁场存在下均由具有平坦表面的纳米尺寸的晶粒组成。 XRD图案表明,在189 mt下沉积的薄膜沿着C轴表现出非常高的晶体取向。结果,该薄膜表现出高迁移率和14.1μW/(cm.K-2)的功率因数,其比沉积在不存在附加磁场的薄膜的功率因数65%。当磁通密度增加到378mt或更高时,薄膜表面被不规则形状的粉末沉积覆盖,导致晶体取向的降低,并通过延伸,所需的热电性能。因此,我们得出结论,施加具有中等磁通密度的附加磁场可以提高由RF磁控溅射沉积的Bi2Te3薄膜的结构和热电性能。

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