Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO 2 gate oxide

摘要

This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2gate oxide. The interface fixed charge density and oxide bulk charge density extracted from the flat-band voltage characteristics were 2.7?×?1011± 6.54?×?1010?cm?2and -9.71?×?1017± 5.18?×?1016?cm?3, respectively. The time dependent dielectric breakdown (TDDB) characteristics exhibited longer lifetime estimation as the SiO2thickness increased. The excellent reliability of the PECVD SiO2film was validated for use as the gate oxide of recessed AlGaN/GaN MOS-HFET.