100 MeV Silicon(9+) swift heavy ion irradiation - Strategic defect annealing approach to enhance the electrical conductivity of few-layered MoS2 sheets - PVA nanocomposite film

摘要

In this study, we report a strategic route to enhance the electrical conductivity of solvent exfoliated MoS2 nanosheets dispersed in Poly-vinyl alcohol (PVA) matrix as a free-standing thin film. 100 MeV Silicon(9+) swift ion beam is used to anneal the defects and decrease the degree of disordemess of MoS2 while in the polymer matrix. Homogeneous dispersion and strong interfacial interaction between the nano-sheets and PVA matrix increases the charge carrier mobility, which in turn results in a dynamic increase of conductivity by 2 orders of magnitude i.e. from 2.5 x 10 (-5) S/cm (pristine) to 2.9 x 10(-3) S/cm (irradiated) at a fluence of 1 x 10(11) ions/cm(2).