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Chemical structure and surface morphology evolution of glow discharge polymer films by ArAr ‐ions intermittent etching

机译: Ar Ar - Irs间歇蚀刻的化学结构和表面形态学演化

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摘要

> The Ar‐ions intermittent‐etching technique was successfully incorporated during the deposition of glow discharge polymer (GDP) films. The ionic components and ion energy distributions (IEDs) of C 4 H 8 /H 2 and C 4 H 8 /H 2 /Ar plasma were diagnosed by an energy‐resolved mass spectrometer, respectively. The Fourier transform infrared spectroscopy, scanning electron microscope, and white‐light interferometer were used to studying the chemical structure, surface morphology, and roughness of the GDP films, which are deposited with the various time of Ar‐ions intermittent etching. With the introduction of Ar into the chamber, the intensity of the C?H absorption peaks becomes weak and the large‐mass C?H species were ionized and dissociated from the mass spectrometer results. The surface roughness of GDP films are decreased with Ar‐ions intermittent etching, the lowest surface roughness (Rq) is only 33.6?nm when the intermittent cycle is 60?minutes/15?minutes. The highest sp 3 CH 3 (sym) absorption peaks are attributed to samples also with 60‐minute/15‐minute intermittent cycle, which shortens the length of the carbon chain and reduces the probability of the cluster formations.
机译: >在沉积期间成功融入了Ar-ions间歇蚀刻技术发光放电聚合物(GDP)薄膜。 C 4 h 8 / h 2 和c 4的离子组分和离子能量分布(IED) 8 / h 2 / Ar等离子体分别由能量分辨的质谱仪诊断。傅里叶变换红外光谱,扫描电子显微镜和白光干涉仪用于研究GDP薄膜的化学结构,表面形态和粗糙度,其沉积在间歇蚀刻的各个时段的ar-离子中沉积。随着AR的引入腔室,C 2 H吸收峰的强度变弱,大质量C'h物种被电离并从质谱仪结果中解离。通过间歇蚀刻的Ar-离子降低GDP膜的表面粗糙度,当间歇循环为60Ω分钟/15Ω分钟时,最低表面粗糙度(RQ)仅为33.6Ω。最高的SP 3 ch 3 (sym)吸收峰归因于60分钟/ 15分钟间歇循环的样品,其缩短了碳链的长度和减少群集形成的概率。

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