> Thin films of Al doped ZnO (Al:ZnO) were deposited on two substrates (Si and glass) at room temperature and 300°C '/>
机译:50?kev h + / sup> +离子束照射Al掺杂的ZnO薄膜:器件应用的辐射稳定性研究
School of Applied SciencesKIIT UniversityBhubaneswar 751024 Odisha India;
School of Applied SciencesKIIT UniversityBhubaneswar 751024 Odisha India;
Department of Physics Faculty of Engineering and Technology (ITER)Siksha ‘O’ Anusandhan UniversityBhubaneswar 751030 Odisha India;
School of Electronics EngineeringKIIT UniversityBhubaneswar 751024 Odisha India;
Inter University Accelerator CentreAruna Asaf Ali Marg New Delhi 110067 India;
Al doped ZnO; band gap; ion irradiation; SEM; thin films; UV‐V is; XRD;
机译:50?kev h + / sup> +离子束照射Al掺杂的ZnO薄膜:器件应用的辐射稳定性研究
机译:Cu(IN,GA)SE的效率增强 2 sub> 2 通过使用MGF采用onMi-定向ZnO纳米结构来薄膜太阳能电池 2 sub> 2 抗反射涂层层
机译:Mo-Doped TiO 2 sub> 2薄膜由无功溅射开发的染料降解研究
机译:Ni〜(7+)SWIFT重离离子辐照对Mn掺杂ZnO薄膜的制备及研究
机译:用于超导装置的聚焦HE +离子束照射的铁预态和MGB2薄膜的修饰
机译:在紫外线和阳光照射下增强了对在PEI柔性基板上生长的Co和In掺杂的ZnO薄膜的结晶紫染料的光催化活性
机译:AC的侵蚀:D薄膜由低电极D +,