Effects of precursor concentration and annealing temperature on CH3NH3PbI3 film crystallization and photovoltaic performance

摘要

The ability to prepare homogeneous and highly crystalline planar perovskite films via the precise manipulation of a one-step solution-based crystallization process is still a key issue that hinders improvements to the ultimate photoelectric conversion efficiency (PCE) of devices. In this study, we prepared a series of planar CH3NH3PbI3 films using a chlorobenzene-assisted fast perovskite crystallization process with various precursor concentrations ranging from 30 to 50 wt% and subsequent annealing at 50-90 degrees C in order to investigate the effects of the precursor concentration and annealing temperature on crystallization and the photovoltaic performance. By precisely controlling the precursor concentration and annealing temperature, we obtained a homogeneous and highly crystalline planar perovskite film with high coverage under the optimized conditions (ca. 40 wt% and 70 degrees C), which led to sufficient light absorption and inhibited charge recombination, thereby yielding an enhanced PCE of 16.21%. Furthermore, the unsealed cell still retained a PCE of 10.98% after ambient air exposure for a period of 408 h.