Numerical Simulation of the Process of Preparation of Multisilicon by the Directional Solidification Method

摘要

A technique for numerical simulation of the process of directional solidification of multisilicon in a square crucible is considered. The application of 2D axisymmetric geometry constructed for a vertical furnace cross section in the calculations is justified. The mathematical model describes the hydrodynamics of a melt, gas flow, global heat exchange, thermal stress, and evolution of the dislocation density in a growing crystal. The sensitivity of the stress and dislocation density to the Alexander-Haasen model parameters is determined.