Generalized Kinetic Equation for Interaction between Liquid-Phase Silicon and Pyrolytic Carbon Surface

摘要

An interaction between the surface of pyrolytic carbon and silicon melt within the temperature range of 1600-2000 degrees C is studied in this work. We showed that this process is multistage and consists of kinetic, diffusion, and transition stages. We found that growth of beta-silicon carbide during the liquid-phase interaction between silicon and the surface of pyrolytic carbon obeys kinetic law and we found the duration of the kinetic stage within the temperature range. We showed that there is an increase in the exponent when the stages of the process are changed, the thickness of the carbide layer increases in the range 1 <= n <= 2, and the activation energy increases from the kinetic stage to the diffusion one. This leads to control of the process by the diffusion stage being the longest in time parameter.