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Fabrication and mechanical, electrical properties study of isocyanate-based polyimide films modified by reduced graphene oxide

机译:用氧化石墨烯异氰酸酯类聚酰亚胺膜的制造和机械性能研究

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摘要

To synchronously improve mechanical properties and electrical conductivity of polyimide (PI) films, PI films with excellent mechanical, electrical conductivity, and antistatic properties that modified by reduced graphene oxide (rGO) were prepared by in-situ polymerization. Depending on the reaction between isocyanate groups and hydroxyl groups on rGO sheets, effectively chemical bonding between rGO and PI matrix was accomplished. They realized excellent compatibility and homogeneous dispersion in PI films and provided strong interfacial interaction with the PI matrix. Testing results revealed that with increasing rGO dosage, more and more groups formed between rGO and PI matrix. At the 0.7 wt% of rGO dosage, tensile strength and elastic modulus of the films increased to a maximum of 103.12 MPa and 3.90 GPa, respectively. Compared with pure PI films synthesized by anhydride and isocyanate, they enhanced about 74 % and 65 %, respectively. Moreover, surface and volume resistivity of films decreased with increasing rGO dosage. The surface resistivity of the films could reduce to 1.232x10(7) Omega with rGO dosage justly 1.0 wt%. It enhanced approximately nine orders of magnitude compared with pure PI films and met the standard for antistatic film material. Dielectric constant at 100 Hz reached to 4.808 (about 85 % increase compared with pure PI films). These results indicated that mechanical properties and electrical conductivity of PI films realized improvement synchronously by the incorporation of rGO. This invention will further promote the widespread application of PI films in electronic packaging fields.
机译:为了同步改善聚酰亚胺(PI)膜的机械性能和导电性,通过原位聚合制备具有优异的机械,导电性和通过还原的石墨烯(RGO)改性的抗静电性能的PI膜。取决于异氰酸酯基团与RGO片材上的羟基之间的反应,完成RGO和PI基质之间的化学键合。它们在PI膜中实现了优异的相容性和均匀分散,并提供了与PI基质的强界面相互作用。测试结果显示,随着RGO剂量的增加,越来越多的rgo和Pi基质之间形成的基团。在0.7wt%的RGO剂量,薄膜的拉伸强度和弹性模量分别增加至最大103.12MPa和3.90GPa。与酸酐和异氰酸酯合成的纯PI薄膜相比,它们分别增强了约74%和65%。此外,薄膜的表面和体积电阻率随着RGO剂量的增加而降低。薄膜的表面电阻率可以减少到1.232×10(7)欧米茄,RGO剂量均为1.0wt%。与纯PI薄膜相比,它增强了大约九个数量级,并符合抗静电薄膜材料的标准。 100Hz的介电常数达到4.808(与纯PI薄膜相比约85%)。这些结果表明,PI膜的机械性能和电导率通过纳入掺入rgo同步地实现了改进。本发明将进一步推动PI膜在电子包装领域的广泛应用。

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  • 作者单位

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

    TREESSUN Inst Res &

    Dev Huzhou 313000 Peoples R China;

    Harbin Engn Univ Coll Aerosp &

    Civil Engn Harbin 150001 Peoples R China;

    Harbin Engn Univ Coll Mat Sci &

    Chem Engn Key Lab Superlight Mat &

    Surface Technol Minist Educ Harbin 150001 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    Polyimide films; Isocyanate; Reduced graphene oxide; Mechanical property; Surface resistivity; Antistatic;

    机译:聚酰亚胺薄膜;异氰酸酯;氧化石墨烯;机械性能;表面电阻率;抗静电;

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