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首页> 外文期刊>Plasma physics reports >Study of the Properties of an Anomalous Glow Discharge Generating Electron Beams in Helium, Oxygen, and Nitrogen
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Study of the Properties of an Anomalous Glow Discharge Generating Electron Beams in Helium, Oxygen, and Nitrogen

机译:氦,氧气和氮气中异常辉光放电产生电子束的性能研究

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摘要

The current-voltage characteristics (CVCs) and efficiency of electron beam generation in glow discharges in helium and its mixtures with oxygen and nitrogen, as well as in pure oxygen and nitrogen, are studied experimentally. Special attention is paid to creating clean conditions for a discharge operating in helium. It is shown that, under clean conditions and pressures above 10 Torr, the CVC first rapidly grows. Then, the growth slows down and the CVC begins to decrease; however, at voltages above 1.5 kV, it rapidly grows again. These features are explained via changes in the mechanisms of electron emission and electron runaway from the cathode sheath, which lead to a highly efficient (up to 85%) generation of electron beams. In the presence of molecular admixtures, the CVC changes and begins to smoothly grow, the current being substantially higher than in pure helium. In pure oxygen and nitrogen, the CVC also grows smoothly and electron beam generation is highly efficient, but its mechanism is different. In pure helium, electrons are generated primarily due to photoemission, whereas in pure oxygen and nitrogen, electron emission from the cathode is mainly caused by the bombardment by fast heavy particles. In helium mixtures with oxygen and nitrogen, other emission mechanisms can also take place.
机译:实验研究了电流 - 电压特性(CVCS)和氦气和氮气和氮气和氮气中的混合物中的电子束产生的电流电压特性(CVC)和效率,以及纯氧和氮。为在氦气中运行的放电创造清洁条件来支付特别注意。结果表明,在10托的清洁条件和压力下,CVC首先迅速增长。然后,增长减慢,CVC开始减少;然而,在1.5 kV以上的电压下,它再次迅速增长。通过来自阴极护套的电子发射和电子失控机构的变化来解释这些特征,这导致高效(高达85%)的电子束产生。在分子混合物存在下,CVC改变并开始平稳地生长,电流基本上高于纯氦。在纯氧和氮气中,CVC也平滑地增长,电子束产生高效,但其机制是不同的。在纯氦气中,电子主要由于光曝光而产生,而在纯氧和氮气中,来自阴极的电子发射主要由轰击快速粒子引起的。在具有氧气和氮的氦混合物中,还可以进行其他排放机制。

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  • 来源
    《Plasma physics reports》 |2019年第11期|共18页
  • 作者单位

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

    Russian Acad Sci Rzhanov Inst Semicond Phys Siberian Branch Novosibirsk 630090 Russia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
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