Microwave photoconductivity of bifacial silicon solar cells of p (+) nn (+) type under laser irradiation

摘要

The microwave photoconductivity of silicon solar cells under laser irradiation has been investigated. It is shown that shunting of the solar cell region exposed to light by the rest of the cell may reduce significantly the relaxation time of microwave photoconductivity in comparison with the nonequilibrium charge carrier lifetime in the base region.