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The study of thiazole adsorption upon BC2N nanotube: DFT/TD-DFT investigation

机译:BC2N纳米管噻唑吸附的研究:DFT / TD-DFT调查

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Herein, we evaluated the adsorption of thiazole over the surface of BC2N nanotube using PBE and M06-2X functionals and 6-311G** standard basis set. We considered one and two thiazole molecules over the outer sidewall of BC2N nanotube. Furthermore, we found that the adsorption energy of thiazole (state II) from its nitrogen head on the boron atom of BC2N nanotube is greater than other states (about - 0.90 eV by PBE and - 1.09 eV by M06-2X functional). It was found that the energy gap of BC2N nanotube is significantly reduced from 0.61 to 0.25 eV after the thiazole adsorption (state II). Our results also indicated that the electronic and optical properties of BC2N nanotube are significantly altered on the adsorption of thiazole.
机译:在此,我们使用PBE和M06-2X功能和6-311g **标准基础设置评估了噻唑在BC2N纳米管表面上的吸附。 我们在BC2N纳米管的外侧壁上考虑了一个和两个噻唑分子。 此外,我们发现从BC2N纳米管的硼头部的噻唑(状态II)的吸附能量大于其他状态(通过PBE和-1.09eV通过M06-2X功能的约0.90eV)。 发现在噻唑吸附后,BC2N纳米管的能隙从0.61至0.25eV显着降低(状态II)。 我们的研究结果还表明,BC2N纳米管的电子和光学性质显着改变了噻唑的吸附。

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