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首页> 外文期刊>Spectrochimica Acta, Part B. Atomic Spectroscopy >Evaluation of different strategies for quantitative depth profile analysis of Cu/NiCu layers and multilayers via pulsed glow discharge - Time of flight mass spectrometry
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Evaluation of different strategies for quantitative depth profile analysis of Cu/NiCu layers and multilayers via pulsed glow discharge - Time of flight mass spectrometry

机译:Cu / Nicu层和多层通过脉冲辉光放电 - 飞行量谱分析的定量深度分析分析不同策略的评价

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There is still a lack of approaches for quantitative depth-profiling when dealing with glow discharges (GD) coupled to mass spectrometric detection. The purpose of this work is to develop quantification procedures using pulsed GD (PGD) - time of flight mass spectrometry. In particular, research was focused towards the depth profile analysis of Cu/NiCu nanolayers and multilayers electrodeposited on Si wafers. PGDs are characterized by three different regions due to the temporal application of power: prepeak, plateau and afterglow. This last region is the most sensitive and so it is convenient for quantitative analysis of minor components; however, major elements are often saturated, even at 30 W of applied radiofrequency power for these particular samples. For such cases, we have investigated two strategies based on a multimatrix calibration procedure: (i) using the afterglow region for all the sample components except for the major element (Cu) that was analyzed in the plateau, and (ii) using the afterglow region for all the elements measuring the ArCu signal instead of Cu. Seven homogeneous certified reference materials containing Si, Cr, Fe, Co, Ni and Cu have been used for quantification. Quantitative depth profiles obtained with these two strategies for samples containing 3 or 6 multilayers (of a. few tens of nanometers each layer) were in agreement with the expected values, both in terms of thickness and composition of the layers. (C) 2017 Elsevier B.V. All rights reserved.
机译:在处理耦合到质谱检测的辉光放电(GD)时仍然缺乏定量深度分析的方法。本作作品的目的是使用脉冲GD(PGD) - 飞行量谱仪的量化程序进行多种。特别地,研究专注于Cu / Nicu纳米纳米和在Si晶片上电沉积的多层的深度分布分析。由于电力的时间应用,PGDS的特点是:Profeak,Parkeau和余辉。最后一个区域是最敏感的,因此很方便的小组件的定量分析;然而,即使在这些特定样本的应用射频功率为30W,主要元素通常是饱和的。对于这种情况,我们根据多立方校准程序调查了两种策略:(i)除了在高原分析的主要元素(CU)外,使用余辉区域,以及(ii)使用余辉用于测量Arcu信号而不是Cu的所有元素的区域。含有Si,Cr,Fe,Co,Ni和Cu的七种均质认证参考材料已被用于定量。通过这两种策略获得的定量深度谱,用于含有3或6个多层的样品(每层几十纳米)的样品与预期值一致,无论是在层的厚度和组成方面都是一致的。 (c)2017 Elsevier B.v.保留所有权利。

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