Selective synthesis of Bi2S3/BiOCl composites as electrode for high performance photodetector

摘要

Bi2S3/BiOCl composites were synthesized through a facile polyol refluxing process. The as-synthesized products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray powder diffraction (XRD), UV-vis diffuse reflectance spectrometer (UV-vis DRS). Herein, a junction was constructed by simply depositing a new Bi2S3/BiOCl nanocomposite film on FTO (Fluorine Doped Tin Oxide) substrate. The new Bi2S3/BiOCl-based photodetector exhibit high sensitivity, high on/off ratio of 330 times, fast rise time of 0.07 s and decay time of 0.07 s, which is the first report among all reported Bi2S3/BiOCl composites-based optoelectronic devices. Our results imply that the new type of photodetector based on Bi2S3/BiOCl composites has great potential in next generation high-performance optoelectronic devices. According to the sensing mechanism discussed, the good optoelectronic performance may be attributed to the Bi2S3/BiOCl composites as well as the schottky junction between FTO electrodes and Bi2S3/BiOCl products.