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首页> 外文期刊>Small >Ultrastable CsPbBr3 Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification
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Ultrastable CsPbBr3 Perovskite Quantum Dot and Their Enhanced Amplified Spontaneous Emission by Surface Ligand Modification

机译:Utrastable CSPBBR3 Perovskite量子点及其增强的表面配体改性增强的扩增自发发射

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摘要

The poor stability and aggregation problem of CsPbBr_3 quantum dots (QDs) in air are great challenges for their future practical application. Herein, a simple and effective ligand-modification strategy is proposed by introducing 2-hexyldecanoic acid (DA) with two short branched chains to replace oleic acid (OA) with long chains during the synthesis process. These two short branched chains not only maintain their colloidal stability but also contribute to efficient radiative recombination. The calculations show that CsPbBr_3 QDs with DA modification (CsPbBr3-DA QDs) have larger binding energy than CsPbBr_3 QDs with OA (CsPbBr3-OA QDs), resulting in significantly enhanced stability. Due to the strong binding energy between DA ligands and QDs, CsPbBr3-DA QDs exhibit no aggregation phenomenon even after stored in air for more than 70 d, and CsPbBr3-DA QDs films can maintain 94.3% of initial PL intensity after 28 d, while in CsPbBr3-OA QDs films occurs a rapid degradation of PL intensity. Besides, the enhanced amplified spontaneous emission (ASE) performance of CsPbBr3-DA QDs films has been demonstrated under both one- and two-photon laser excitation. The ASE threshold of CsPbBr3-DA QDs films is reduced by more than 50% and their ASE photostability is also improved, in comparison to CsPbBr3-OA QDs films.
机译:空气中CSPBBR_3量子点(QDS)的稳定性和聚集问题差是对未来实际应用的巨大挑战。在此,通过在合成过程中引入具有两个短支链链的2-己二烯二烷酸(DA)来提出简单且有效的配体改性策略,以替代具有长链的大黄酸(OA)。这两个短的分支链不仅保持胶体稳定性,而且有助于有效的辐射重组。计算结果表明,具有DA修改(CSPBBR3-DA QD)的CSPBBR_3 QD比具有OA(CSPBBR3-OA QD)的CSPBBR_3 QD具有更大的绑定能量,导致稳定性提高。由于DA配体和QDS之间的强粘合能,即使在空气中储存超过70d,CSPBBR3-DA QD也没有聚集现象,并且CSPBBR3-DA QDS膜可以在28 d后保持94.3%的初始PL强度。在CSPBBR3-OA QDS薄膜中,发生PL强度的快速降解。此外,在单光子激光激发的情况下,已经在CSPBBR3-DA QD膜的增强的扩增自发发射(ASE)性能。与CSPBBR3-OA QD薄膜相比,CSPBBR3-DA QD膜的ASE阈值减小超过50%,并且其ASE光稳定性也得到改善。

著录项

  • 来源
    《Small 》 |2019年第23期| 共11页
  • 作者单位

    Key Laboratory of Optoelectronic Technology &

    Systems (Ministry of Education) Chongqing University Chongqing 400044 China;

    State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;

    Key Laboratory of Optoelectronic Technology &

    Systems (Ministry of Education) Chongqing University Chongqing 400044 China;

    Key Laboratory of Optoelectronic Technology &

    Systems (Ministry of Education) Chongqing University Chongqing 400044 China;

    State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;

    State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;

    State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;

    State Key Laboratory of High Field Laser Physics Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China;

    Key Laboratory of Optoelectronic Technology &

    Systems (Ministry of Education) Chongqing University Chongqing 400044 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料 ;
  • 关键词

    amplified spontaneous emission; CsPbBr_3 quantum dots; density functional theory; ligand modification; stability;

    机译:扩增的自发发射;CSPBBR_3量子点;密度函数理论;配体改性;稳定性;

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