Finite Elements Method Coupled with Delaunay Triangulation Method Applied on a Silicon Corner Diode

摘要

This work considers a two dimensional numerical device simulation system using a novel digitizing scheme based on finite elements coupled with the Delaunay triangulation method which allowed an optimal mesh involved in nonrectangular devices as a corner diode. A grid was generated automatically according to the specified device geometry standing on the Delaunay triangulation process. The solution of the problem consists in the resolution of three strong nonlinear partial differential equations (PDE) which are, in occurrence, two dimensional Poisson and continuity equations. Modeled voltage, free carriers distribution and I-V characteristics were extracted when the PN junction resolution was based on second-order Bezier curves. The results are presented using a Delaunay triangulation meshing mathematical tool.