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Damping Capacity of Ni–Mn–Ga–Gd High-Temperature Shape Memory Thin Film

机译:Ni-Mn-Ga-Gd高温形状记忆薄膜的阻尼能力

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The damping capacity of Ni–Mn–Ga–Gd films annealed for different durations has been investigated by dynamic mechanical analysis (DMA) measurement. The DMA results show that the internal friction peaks are absent in the IF curves, due to very low transformation rate and low transformation strain in the films. With the increase of annealing time, the value of tan delta in martensite first increases then decreases due to the combined effect of grain size and martensite structure change. Owing to the occurrence of high-temperature creep behavior, an abrupt increase of tan delta takes place over 400?°C in the film annealed for 10?h. The film annealed for 5?h shows good thermal stability of phase transformation and keeps a high damping capacity in martensite after ten times of repeated DMA measurement. In terms of the high damping capacity (tan δ ?=?0.046) in martensite, high transformation temperature ( A ~(s)?=?292?°C), and good thermal stability, the film annealed for 5?h can be used as a damping material for MEMS devices in elevated temperature.
机译:通过动态机械分析(DMA)测量研究了用于不同持续时间的Ni-Mn-Ga-Gd膜的阻尼能力。 DMA结果表明,IF曲线中不存在内部摩擦峰,由于薄膜中的变换率和低转化应变非常低。随着退火时间的增加,马氏体中的Tan delta的值首先增加,随后由于晶粒尺寸和马氏体结构变化的综合效应而降低。由于高温蠕变行为的发生,Tan Delta的突然增加在薄膜中发生了超过400℃的10μl。薄膜退火5?H显示出相变的良好的热稳定性,并且在重复DMA测量的十倍后,马氏体在马氏体中保持高阻尼能力。就马氏体中的高阻尼能力(TaNδ=Δ= 0.046)而言,高转化温度(a〜(s)?= 292℃),良好的热稳定性,薄膜退火5?H可以用作MEMS器件在升高的温度下的阻尼材料。

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