Novel Oxide TFT Technology for Ultra-high Definition and Super-narrow Border Notebook Displays

摘要

It is demonstrated that novel back-channel-etch type oxide TFTs (InGaZnSnOx target material for oxide semiconductor) with below 10% threshold voltage uniformity, better stability and above 10cm~2/V·s electron mobility in G4.5 factory. From etch-stop type to back-channel-etch type, ultra-high definition 15.6 inch notebook display with only 1.2mm left and right border has designed and manufactured for the first time by the way of single-side gate driver in panel.