About complexity of the 2.16-eV absorption band in MgO crystals irradiated with swift Xe ions

摘要

The precise study of the accumulation and subsequent thermal annealing of the defects responsible for the complex absorption band around 2.16 eV, being under discussion in the literature for a long time, has been performed in highly pure MgO single crystals exposed to 0.23-GeV Xe-132 ions with a fluence of Phi = 5 x 10(11) - 3.3 x 10(14) ions/cm(2). Three Gaussian components with the maxima at 2.16, 2.02 and 2.40 eV have been considered as a measure of so-called D-1, D-2 and D-3 defects. Similar to the F and F+ ( centers, the concentration of these defects increases at high fluences without saturation marks, thus confirming their radiation-induced nature (involvement of novel Frenkel defects). The accumulation of D-1 and the first stage of D-type defect annealing up to 700 K occurs similarly to single F-type centers, while the following increasing stage for D-2,D-3 starts above 700 K; their concentration reaches the maximum at 900 K (practically plateau is seen in this temperature region for D-1 and complete annealing of the D-type defects proceeds at 1100 K. Behavior of the D-1 defects (accumulation rate, annealing kinetic at high temperatures) clearly differs from that for other D-type defects (especially D-2). In our opinion, the D-1 defects are high-order aggregates of anion vacancies (and not the anion vacancy dimers), while the involvement of additional structural defects into the D-2,D-3 defects is suggested.