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New luminescent ceramics based on anion-deficient Al2O3-BeO for high-dose dosimetry

机译:基于阴离子缺陷Al2O3-BEO的新的发光陶瓷,用于高剂量剂量

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摘要

New Al2O3-BeO ceramics were synthesized by using high-temperature treatment of the initial compacts of nanostructured alumina in BeO crucible. The decomposition of the pulsed cathodoluminescence spectra into Gaussians revealed the luminescence bands related to oxygen vacancies and their aggregates in the ceramics. TL of the synthesized ceramics exposed to high-dose irradiation contained three peaks at 360 (A), 525 (B) and 730 K (C). It was found that optical stimulation at the wavelength of 470 nm causes optical bleaching of the traps responsible for peaks A and B, in contrast to the deep traps of the peak C, and gives rise to OSL. At the same time, there was a shift of the position of peaks A and B to the high-temperature region. This result shows the presence of the energy distribution of the traps responsible for TL peak A. It was found that the range of linearity of the TL dose response after gamma-irradiation is from 0.01 to 1.0 kGy. After irradiation with a pulsed electron beam (130 keV), the linear behavior of the OSL dose response was observed from 3 to 30 kGy.
机译:通过使用甲状腺坩埚中的纳米结构氧化铝的初始块的高温处理来合成新的Al2O3-Beo陶瓷。将脉冲的阴极致发光光谱分解为高斯透露与陶瓷中的氧空位有关的发光带和它们的聚集体。接触高剂量照射的合成陶瓷的T1含有360(a),525(b)和730k(c)的三个峰。发现波长470nm的光学刺激导致捕集峰A和B的捕集器的光学漂白,与峰C的深阱相反,并产生OSL。同时,峰值A和B的位置偏移到高温区域。该结果表明,对T1峰A负责的捕集器的能量分布的存在。发现γ-辐射后T1剂量反应的线性度范围为0.01至1.0 kgy。在用脉冲电子束(130keV)照射后,从3到30 kgy观察到OSL剂量响应的线性行为。

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