首页> 外文期刊>Research on Chemical Intermediates >Enhancing the interaction between CO and single layer black phosphorous via transition metals impurities and external electric field: a theoretical study
【24h】

Enhancing the interaction between CO and single layer black phosphorous via transition metals impurities and external electric field: a theoretical study

机译:通过过渡金属杂质和外部电场增强CO和单层黑色磷的相互作用:理论研究

获取原文
获取原文并翻译 | 示例
           

摘要

A systematic theoretical study based on density functional theory has been performed to explore the interaction features of CO molecule and metal-doped single layer black phosphorous (BP). Electronic structure calculations were carried out using a PBE exchange functional in conjugation with a valence double-zeta polarized/diffused basis set. To investigate the effect of impurities on the adsorption potential of the system toward CO molecules, selected transition metals (Sc, Ti, V, Co and Ni) were doped in BP layer. The results showed that while the pristine BP layer was not a superior sorbent for CO molecule and applicable for using in CO sensor devices, the calculated adsorption energies for CO/doped BPs were found to be in the range of 0.121-0.395 eV which proved the weak interaction between CO and metal doped BPs. Since the effect of imposing an electric field on the efficiency of low-dimensional systems is to be studied, we applied external electric fields in the range of 0.001-0.01 au for all of the systems. The adsorption energies were found to be as 0.153, 2.089, 0.990, 0.190, 0.883 and 0.807 eV for pristine, Sc, Ti, V, Co and Ni doped BP systems, respectively. For all systems the distribution of HOMO/LUMO, DOS and PDOS graphs were discussed before and after gas adsorption. Our results suggested that due to the high value of adsorption energy, Sc-BP may be used for CO molecule removal applications while V-BP can be applied in CO sensor devices because of a significant change of gap of energy after CO adsorption.
机译:已经进行了基于密度泛函理论的系统理论研究,探讨了CO分子和金属掺杂单层黑色磷(BP)的相互作用特征。使用PBE交换功能在与价双Zeta偏振/扩散基集合中的缀合中进行电子结构计算。为了探讨杂质对CO分子的系统的吸附电位的影响,在BP层中掺杂了所选的过渡金属(SC,Ti,V,CO和Ni)。结果表明,虽然原始BP层不是CO分子的高级吸附剂,并且适用于在CO传感器装置中使用,发现CO /掺杂BPS的计算吸附能量在0.121-0.395eV的范围内,证明了CO与金属掺杂BPS之间的弱相互作用。由于研究了对低维系统效率施加电场的效果,因此我们为所有系统应用了0.001-0.01 Au的外部电场。发现吸附能量为0.153,2.089,0.990,0.190,0.883和0.807eV,分别用于原始,SC,Ti,V,Co和Ni掺杂BP系统。对于所有系统,在气体吸附之前和之后讨论了HOMO / LUMO,DOS和PDO和PDOS图的分布。我们的研究结果表明,由于吸附能量高,SC-BP可用于CO分子去除应用,而V-BP可以在CO传感器装置中应用,因为CO吸附后能量间隙的显着变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号