X-ray laser near 13.5 and 11.3 nm in Xe26+ driven by an intense pump laser interacting with xenon cluster jet as a promising radiation source for nanolithography

摘要

The model of highly efficient (yield similar to 0.1-1% of pumping energy) monochromatic radiation sources near lambda = 13.5 and 11.3 nm, intended for commercial nanolithography is presented. The sources are based on x-ray lasers on four transitions: 3p(5)3d(10)4l-3p(5)3d(10)4l' (lambda near 13.5 nm) and self photo-pumped 3d(9)4f (J = 1)-3d(9)4d (J = 1) (lambda similar to 11.3 nm) transition of Ni-like xenon (Xe26+). New inversion mechanisms are discussed. A sufficiently intensive pumping pulse interacting with xenon cluster jet forms plasma. Optimal plasma parameters and quantum yields are predicted for each x-ray laser line. At pump intensities. >= 10(18) W cm(-2), immediately after the interaction, plasma is formed in the state with dominating Xe26+ ions. This condition is absolutely necessary for the short-lived lasing at 11.3 nm and for the wavelengths of laser transition measurements.